发明名称 PHOTOMASK FOR SEMICONDUCTOR MANUFACTURING
摘要 <p>PURPOSE: To make it possible to obtain a phase transition mask having self- aligned phase transition boundaries and to obtain a contrast of the sharp ends of the light transmitted through the mask during use by uniformly depositing and forming etching stop layers on the patterns of opaque regions. CONSTITUTION: Transparent regions 14 have two pieces of partial regions 14a and 14b formed of transparent materials varying in thicknesses. Then, the light transmitted through the partial regions 14a and 14b has a specified phase difference and more preferably phase difference 180 deg. as the thicknesses of these regions vary. The thin regions 14a are mask glass coated by the transparent etching stop layers and the thickness regions 14b are mask glass coated with phase transition materials and the etching stop layers. The thin regions 14a have the first boundaries 15a with the opaque regions 12 to each other and the thickness regions 14b have the secondary boundaries 15b with the thin regions 14a to each other. The second boundaries 15b are the position where the phase transition of the transmitted light occurs.</p>
申请公布号 JPH06266094(A) 申请公布日期 1994.09.22
申请号 JP19930241815 申请日期 1993.09.28
申请人 TEXAS INSTR INC <TI> 发明人 SONGUSU KUO
分类号 G03F1/00;(IPC1-7):G03F1/08;H01L21/30 主分类号 G03F1/00
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