| 摘要 |
<p>PURPOSE:To eliminate static electricity from a substrate in a short time after etching so that the substrate can be quickly removed from a stage by supplying an ionized gas carrying charges of the polarity different from that of the charges of the substrate. CONSTITUTION:After the etching of a substrate 5 is completed, the generation of plasma is stopped by turning off a high-frequency power source 8 and DC power source 9. Then the supply of a process gas and substrate cooling gas is stopped and charges are eliminated from the substrate 5 by supplying an ionized gas carrying charges of the polarity different from that of the charges of the substrate 5 to the rear surface of the substrate 5 through a passage 13 by means of an ionizing device 12. The process gas, substrate cooling gas, and ionized gas are always discharged from a reactor chamber 1 through an exhaust port 14. When the static electricity is eliminated from the substrate 5, the substrate 5 loses its attracting force and can be easily removed from an electrostatic attracting stage 4.</p> |
