| 摘要 |
PURPOSE:To improve resolution of the negative photoresist composition by using a specific copolymer as the base resin and adding an acid generating agent and a crosslinking agent. CONSTITUTION:The photoresist composition based on the chemical amplification is obtained by using as the base resin a copolymer contg. a component, the crosslinking reaction of which is allowed to proceed by performing the postexposure-heating of the resist composition, such as hydroxystyrene together with another component, the crosslinking reaction of which proceeds at the time of performing the exposure of the resist composition, such as chloromethylstyrene and by adding an acid generating agent and a crosslinking agent. A base resin consisting of only a component, the crosslinking of which proceeds after the exposure, such as chloromethylstyrene is insoluble in alkali. Therefore, the content of the above component such as chloromethylstyrene of the base resin is required to be low to maintain the solubility of the resist composition in alkali. Accordingly, by using as the base resin a polymer which is obtained by copolymerizing hydroxystyrene with 1 to 10% chloromethylstyrene based on the base resin, the resist composition that meets the necessary conditions can be obtained. |
