| 摘要 |
PURPOSE:To provide a practical and novel structure in which a blue light- emitting element using gallium nitride compound semiconductor can be formed to emit a high-output light and its wavelength is set to a blue region of high luminance of specific nm. CONSTITUTION:The blue light-emitting element comprises a gallium nitride compound semiconductor in which an n-type Ga1-aAlaN (0<=a<1) layer as a first clad layer, an n-type InXGa1-XN (where X is set to 0<X<0.5) layer containing Zn of a concentration of 1X10<17>-1X10<21>/cm<3> as a light-emitting layer formed thereon and a p-type Gax-bAlbN (0<=b<1) layer containing Mg of a concentration of 1X10<18>-1X10<21>/cm<3> as a second clad layer formed thereon are sequentially laminated. |
