Method of bonding silicon and III-V semiconductor materials

摘要

A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V semiconductor wafer, rather than the silicon wafer, the bonding process is facilitated, creating a sufficiently strong bond to carry out further processing. The III-V semiconductor wafer is thinned to relieve stress after the bonding procedure. The bonded wafers may be subjected to a second bonding procedure to increase the bond strength. The bonded wafers can then be subjected to high temperature processing used in semiconductor device fabrication.