Magnetic field enhanced plasma processing chamber

摘要

A plasma etch reactor comprising a remote source of plasma mounted on a vacuum processing chamber has a large permanent magnet ring around the area of the chamber where the plasma enters, magnetically oriented so that magnetic field lines are removed from said plasma in the processing chamber, and two or more pairs of magnet rings mounted around said chamber to form a series of magnetic cusps about the wall of said chamber, to thereby inhibit plasma electrons from striking the wall of said chamber. A substrate entry port can be fitted between the magnet rings, allowing automatic ingress and egress of said substrates with maximum efficiency.