发明名称 Tunable surface emitting semiconductor laser.
摘要 The disclosed tunable (wavelength and/or focal length) laser typically is a surface emitting laser that comprises a multilayer structure that comprises the lower Bragg reflector and the active region. A layer of electro-optic material (typically liquid crystal material) is in contact with the top surface of the multilayer structure, and means are provided for applying a voltage across the layer of electro-optic material. In one exemplary embodiment, the layer is inside the laser cavity, making the laser wavelength tunable. In another exemplary embodiment the laser is a Z-laser that focuses the output radiation, with the multilayer structure comprising also the upper Bragg reflector. In this embodiment the layer of electro-optic material is outside the laser cavity, and the laser has tunable focal length. A still further embodiment is both wavelength- and focal length-tunable. Lasers according to the invention can be advantageously used in a variety of applications, e.g., in a wavelength division multiplexed and/or optically amplified optical fiber communication system.
申请公布号 EP0614256(A1) 申请公布日期 1994.09.07
申请号 EP19940301283 申请日期 1994.02.23
申请人 AT&T CORP. 发明人 DUTTA, NILOY KUMAR;VAKHSHOORI, DARYOOSH
分类号 H01S3/10;G02F1/29;H01S3/00;H01S3/106;H01S5/00;H01S5/026;H01S5/062;H01S5/183 主分类号 H01S3/10
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