| 摘要 |
PURPOSE:To allow a sharp reduction of the number of manufacturing processes of memories including a memory cell having a fin structure stacked capacitor while, as a result, improving a manufacturing yield and reliability of this kind of integrated circuits in relation to a manufacturing method of an integrated circuit device. CONSTITUTION:After forming an interlayer insulating film 3 covering an Si semiconductor substrate 1, a laminate consisting of a-C film 11 and a polycrystal Si film is formed, the laminated is etched in a condition able to have a selective ratio to the interlayer film 3 so as to form a part of a storage electrode contact hole, the interlayer insulating film 3 is etched so as to make it to perform drawing penetration of the storage electrode contact hole in order to exhibit a part of the semiconductor substrate for forming the Si film on the surface including the inside of the storage electrode contact hole. Then, after the Si film and the laminate are patterned in the shape of the storage electrode, a-c film 11 is removed in order to finish the storage electrode having fins 12A, 12B, 12C of Si extending in the branched form from an Si body part located in the storage electrode contact hole. |
