| 摘要 |
PURPOSE:To facilitate injection of a carrier in a suspended gate electrode by providing a conductive material layer on a part of the substrate surface working as source or drain or channel area. CONSTITUTION:A source area 8 and a drain area 7 conductive reversely to a semiconductor substrate 1 are provided in the neighborhood of main plane of the substrate 1; a suspended gate electrode 12 consisting of the first conductive material layer is provided by way of source and drain areas 8, 7 and the first gate insulating film 11 on the substrate surface in a channel area coming between the two above. The second gate insulating film 13 is provided on the electrode 12, and a control electrode 14 consisting of the second conductive layer is provided further thereon. Then, the third conductive material layer 6 consisting, for example, of multicrystal Si is provided on a part of the substrate surface working as source and drain areas 8, 7 or channel area, and a part of the insulating film 11 is formed thereon. Electron or hole will be injected from the layer 6 into the gate electrode 12 by electric field of the thin insulating film 11 on the layer 6, thus facilitating the storage action for write and erase. |
