| 摘要 |
PURPOSE:To form a transparent conductive film by subjecting the mixture of In2O3 powder with SnO2 powder to a hot-pressing treatment, a sintering treatment, and subsequently an oxidation treatment, and using the product as a target material having a specific sintered density, a specific sintered particle diameter and a prescribed refractive index to a light having a prescribed wave length. CONSTITUTION:The powder of In2O3 and the powder of SnO2 are mixed with each other in a weight ratio of 97/3 to 85/15, hot-pressed at 700-1500 deg.C under a pressure of 50-200kg/cm<2> at 700-1500 deg.C, and subsequently subjected to an oxidation treatment in a graphite mold at >=300 deg.C, preferably 600-1300 deg.C, in the atmosphere to produce the In2O3.SnO2 sintering product having a sintered density of 5.5-6.5g/cm<3>, a sintered particle diameter of >=0.1mum and a reflectance of 15-70% to a light having a wavelength of 550-700nm. The sintering product is used as a sputtering target to form a high performance transparent conductive film. |
