| 摘要 |
PURPOSE:To easily obtain a fine CMOS field effect transistor adapted for a high integration by providing N-channel and P-channel transistors on one set of sidewalls in which grooves are opposed. CONSTITUTION:N-channel and P-channel gate insulating films 1, 2 and gate electrodes 3 of CMOSFET are formed along the sidewalls of grooves 20. Further, N-channel and P-channel regions are formed in U shape in the profile of a gate insulating film formed in U shape in a flat shape. Thus, N-well separating region width is largely reduced, a surface area can be much remarkably reduced as compared with a conventional CMOS structure, an effective channel length can be easily obtained in a long length as compared with the conventional CMOS structure formed with the gate electrodes on a silicon substrate to sufficiently suppress a short-circuit channel effect in a fine CMOSFET. |
