| 摘要 |
PURPOSE:To prevent any deterioration in dielectric strength of a ground insulating film and to easily carry out a desired etching treatment by a method wherein the inflow of negative charge is obstructed by forming a charge-blocking substance on the rear side of an object to be treated. CONSTITUTION:In a vacuum vessel 10 made of stainless steel, an upper electrode 11 and a lower electrode 12 are disposed opposite to each other such as to respectively form wall portions of the vacuum vessel 10, thereby constituting a parallel flat-plate electrode structure. The electrodes 11, 12 are insulated from the vacuum vessel by Teflon rings 13, 14, respectively. An object 4 to be treated is placed on the lower electrode 12. The inside postions of the electrodes 11, 12 are water-cooled by cooling pipes 15, 16, respectively. A reactive gas is introduced into the inside of the vacuum vessel 10 from a gas introduction inlet 17 provided in the central portion of the upper electrode 11. The output from an RF power source 19 is applied to the electrodes 11, 12 through a switch 20 and matching devices 21, 22. A diode is previously formed on the rear side of the object 4, and the object 4 is mounted on the lower electrode 12. Thus, the patterning is effected on the polycrystalline silicon layer. |
