| 摘要 |
PURPOSE:To prevent the dispersion of operation of the semiconductor elements to be formed on the substrate from eliminating at the time of operation by a method wherein regions, which are in close contact to the semiconductor elements, are not used for the operation of the semiconductor elements and make nearly the same operation as that of the semiconductor elements, are provided. CONSTITUTION:Dummy regions 1 and 2 are formed in the same configuration, the same dimension and the same impurity diffusion concentration as those of resistance elements 10-12, which are formed on the substrate and wherein an impurity diffusion is performed, in such a way that the dummy regions 1 and 2 are formed in parallel to the parallel patterns of the resistance elements 10-12 and each element is formed on a field film 20 at equal intervals l1. Patterned electrodes 7, 15, 16 and 19, which are formed of a metal thin film such as an aluminum thin film or a polycrystalline Si film, are formed by coating on the resistance elements 10-12 in such a way as to be electrically connected. By this way, the mutual interference among the patterns is suppressed at the time of exposure, each resistance element is formed with good dimensional accuracy, and at the same time, the same exposure can be performed on each resistance element and each resistance element is formed in the same dimension, thereby enabling to suppress the dispersion of operation of each resistance element. |
