| 摘要 |
PURPOSE:To form a memory cell pattern under optimal exposure conditions without leaving residual resist unremoved when a semiconductor device of polysilicon multilayered structure composed of a memory cell region and a peripheral circuit region is formed. CONSTITUTION:A first to a fourth polysilicon layer, 41 to 43 and 47, are formed on a semiconductor substrate 11, and a process wherein an element which constitutes a memory cell region 21 and/or another element which constitutes a peripheral circuit region 31 provided around the former element is formed of these polysilicon layers is repeatedly carried out to form a semiconductor device of this constitution. For instance, when the pattern of the memory cell region 21 is formed of the fourth polysilicon layer 47, openings 48 to 50 are provided for the fourth polysilicon layer 47 corresponding to a connection hole forming part 32, a fuse forming part 33, and a bonding pad forming part 34 provided to the peripheral circuit region 31. |
