| 摘要 |
A method of forming a Bi system copper oxide superconducting thin film of Bi2Sr2Can-1CunOx (n>/=2) including at least the equivalent of a pair of a full CuO molecular layer and a full CaO molecular layer, by a layer-by-layer process (an atomic layer piling process) using MBE. In accordance with the method, the CuO and CaO needed for the film are deposited in a pile by alternately depositing CuO in an amount equal to a 1/m portion of a full CuO molecular layer and CaO in an amount equal to a 1/ m portion of a full CaO molecular layer in a manner similar to that used for superlattice structure formation. The alternate deposition of CuO and CaO layer portions is repeated m times where m is an integral number of not less than n. During the deposition process, the deposition time of each CuO portion is X/m, where X is the depositing formation time of one full CuO molecular layer, and the deposition time of each CaO portion is Y/m, where Y is the depositing formation time of one full CuO molecular layer.
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