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发明名称
METHOD OF FABRICATING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号
KR940007654(B1)
申请公布日期
1994.08.22
申请号
KR19910006658
申请日期
1991.04.25
申请人
TOSHIBA CO., LTD.
发明人
YOSHIKAWA, KUNIYOSHI
分类号
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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