COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The method isolates a semiconductor substrate and the conduction layer of a compound semiconductor from each other by forming a video using a selective epitaxial method. The method comprises the steps of: (A) forming an insulating layer having a stripped pattern on a substrate; (B) forming a first conduction type buffer layer; (C) forming a channel composed of a second conduction type ion on a buffer layer; (D) forming a spacer layer of a first conduction type on a channel; (E) forming gate electrode on the surface of a spacer; (F) forming a high density second conduction type well region; and (G) forming a source and drain on the surface of a well region.