| 摘要 |
PURPOSE: To provide a method for simply forming a semiconductor layer which is isolated on an insulating layer, without the use of anodizing processes. CONSTITUTION: A method includes, after formation of a first insulating film 32 on a semiconductor substrate 30, a step of removing the first insulating film 32 at sites, corresponding to seeds of single-crystalline layer growth to make an opening 34, a step for forming a semiconductor film 36 to grow a single-crystalline layer 30' from the opening 34, a step for determining an active region 300 in a grown single-crystalline layer 30' and removing the single- crystalline layer, except for the active region, a step for forming a second insulating film 38' on the top and side faces of an active region 300, and then a step for subjecting the substrate to an oxidizing process to form a third insulating film 302 at the bottom of the opening 34. Thereby there is fabricated at a high speed, a high quality of semiconductor device which can prevent wafer pollution and improper silicon crystallization of the active region, can remove size limitations of the active region, can suppress generation of defects in the active region caused by oxide growth, and can simplify its steps.
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