| 摘要 |
PURPOSE:To obtain a MOS semiconductor device which has element life longer than or equal to 10 years under the condition of AC stress. CONSTITUTION:The values of inductance L of metal wirings 21, 24 from a source 17 to the earth are made smaller than or equal to 15.4XLg+4.6 [nH]. Thereby the life of an N-type MOS semiconductor device source can be made longer than or equal to 10 years under the condition of AC stress. |
