| 摘要 |
PURPOSE:To increase the density of memory-cell integration by providing embeded regions in a memory device and using them as juntion capacitances. CONSTITUTION:A plurality of N<+> embeded regions 2 are diffused in a P<+> Si substrate 1, the regions 2 are surrounded by an SiO2 film 3, and P-type layer is epitaxially grown all over the surface. Then, P<+> monocrystal layer 4s is formed on the regions 2 to prevent the rising of the regions 2, and a P<+> polycrystal layer 4p is formed on the film 3. Thereafter, P<-> monocrystal layer 5s and P<-> polycrystal layer 5p are stacked and epitaxially grown on the layer 4s and 4p, respectively, and oxidized films 6 are formed in the polycrystal layers 5p and 4p, thereby memory-cell portion is separated. Two gate-oxidized films 7 and Si-gate electrodes 8 are vertically provided on the monocrystal layer 5s, which is centrally located, at the positions opposing the regions 2. An N<+> source region 10 and drain regions 11 are diffused on both sides of the gate-oxidized films 7 and in the regions 2. Then, a PSG film 9 is provided all over the surface, an opening is provided, and an Al- electrode wire 12 which is connected to the region 10 is deposited. |
