| 摘要 |
PURPOSE:To provide an intermediate potential generation device with a small layout area and with low power consumption and precisely outputting intermediate potential. CONSTITUTION:A transistor formed on a semiconductor substrate with a triple well structure is used between a power source potential node 100 and a grounded potential node 200, and a first circuit 310 and a second circuit 330 with the same electric characteristic are connected, and first reference potential Vr1 is outputted from the first circuit 310. Similarly, a third circuit 340 and fourth circuit 360 with the same electric characteristic are connected between the power source potential node 100 and the grounded potential node 200, and second reference potential Vr2 is outputted from the third circuit 340. The first reference potential Vr1 and the second reference potential Vr2 are received by n-channel MOS transistor 420 and p-channel MOS transistor 430 for drivers, and the intermediate potential between the power source potential and the grounded potential is outputted from an output node 410. |
