发明名称 METHOD FOR FORMING PATTERNS ALIGNED ON EITHER SIDE OF A THIN FILM
摘要 The formation of patterns (11, 22) aligned on both sides of a thin film (3) comprises: (a) the formation, on a substrate, of a structure made up of a first pattern layer and the thin film; (b) the formation of a first mark; (c) engraving of the first pattern layer to form a first pattern aligned with the first mark; (d) deposition of an adhesive layer (13) covering the first mark and the first pattern; (e) turning the structure; (f) suppression of the substrate; (g) the formation, by engraving of the adhesive layer, of a second mark (16) at the position of the first mark; (h) deposition of a second pattern layer; and (i) engraving the second pattern layer to form the second pattern aligned with the second mark.
申请公布号 EP1573810(A2) 申请公布日期 2005.09.14
申请号 EP20030809991 申请日期 2003.12.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 VINET, MAUD;DELEONIBUS, SIMON;PREVITALI, BERNARD;FANGET, GILLES
分类号 H01L23/544;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L23/544;H01L21/768 主分类号 H01L23/544
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