发明名称 |
METHOD FOR FORMING PATTERNS ALIGNED ON EITHER SIDE OF A THIN FILM |
摘要 |
The formation of patterns (11, 22) aligned on both sides of a thin film (3) comprises: (a) the formation, on a substrate, of a structure made up of a first pattern layer and the thin film; (b) the formation of a first mark; (c) engraving of the first pattern layer to form a first pattern aligned with the first mark; (d) deposition of an adhesive layer (13) covering the first mark and the first pattern; (e) turning the structure; (f) suppression of the substrate; (g) the formation, by engraving of the adhesive layer, of a second mark (16) at the position of the first mark; (h) deposition of a second pattern layer; and (i) engraving the second pattern layer to form the second pattern aligned with the second mark. |
申请公布号 |
EP1573810(A2) |
申请公布日期 |
2005.09.14 |
申请号 |
EP20030809991 |
申请日期 |
2003.12.16 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
VINET, MAUD;DELEONIBUS, SIMON;PREVITALI, BERNARD;FANGET, GILLES |
分类号 |
H01L23/544;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L23/544;H01L21/768 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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