| 摘要 |
PURPOSE:To provide a semiconductor device capable of controlling the threshold voltage of a thin film SOIMOSFET to a desired value easily. CONSTITUTION:A buried SiO2 layer 2 is formed on the surface of a silicon substrate 1, and a single-crystal silicon layer 3 made of thin film is installed on the SiO2 layer 2. Also, an N channel MOSFET using an N<+> polysilicon gate 6 is formed on the single-crystal silicon layer 3. Further, in the buried SiO2 layer 2, a polysilicon layer 4 electrically insulated from other parts is buried in a position opposite to at least a channel region of the MOSFET, and a metal electrode 5 is installed on the rear of the silicon substrate 1. Then, negative charges are stored in the polysilicon layer 4 by the metal electrode 5.
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