| 摘要 |
A Bi-MOS semiconductor device of the type having a bipolar device and a plurality of MOS devices formed on a principal surface of a semiconductor aubstrate and a method of producing the same. The device includes a plurality of element isolation regions each thereof being composed of a first semiconductor region formed in the semiconductor substrate and having the same type of conductivity as the semiconductor substrate, and a thick insulation layer formed on the first semiconductor region, and at least one of an emitter electrode and a collector electrode formed in the bipolar device, gate electrodes formed in the MBS devices, a low-resistivity polycrystalline layer formed by a buried contact from one of the MOS devices and a high-resistivity portion formed by a high resistivity polycrystalline silicon layer connected to the low-resistivty polycrystalline silicon layer are formed from a polycrystalline silicon layer formed by the same layer formation.
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