发明名称 |
DEVICE FOR PULLING UP SINGLE CRYSTAL |
摘要 |
PURPOSE:To provide a device for pulling up especially a large-diameter and high-quality single crystal with the controlled oxygen concn. and uniform oxygen distribution (ORG) in the wafer plane and with uniform oxygen concn. in the axial direction. CONSTITUTION:A flow straightener 2 has an outer diameter (d) smaller than the inner diameter D of a crucible 3 and consists of a cylindrical part 4 extending almost vertically along the flow direction of a descending carrier gas G, a reduced-diameter part 6 contracted from the lower end of the cylindrical part 4 and forming a lower gap 5 with a pulled up single crystal S and a detaining part 7 forming an upper gap 18 outside the straightener 2 by partially supporting the straightener 2 in a pulling-up chamber 1. The carrier gas passage is separated by the straightener 2 into a first passage P1 for the carrier gas branched at the upper end of the cylindrical part 4 and extending into the cylindrical part 4 and the second passage P2 in which the carrier gas G passes through the lower gap 5 from the first passage P1 and then between the molten material surface and the straightener 2, branches at the upper part of the cylindrical part 4 and passes through the upper gap 18. |
申请公布号 |
JPH06219886(A) |
申请公布日期 |
1994.08.09 |
申请号 |
JP19930012668 |
申请日期 |
1993.01.28 |
申请人 |
MITSUBISHI MATERIALS SHILICON CORP;MITSUBISHI MATERIALS CORP |
发明人 |
IKEZAWA KAZUHIRO;YASUDA HIROSHI;TANIGAWA AKIRA;KOJIMA HIROYUKI;HOSODA KOJI;KOBAYASHI YOSHIFUMI |
分类号 |
C30B15/00;C30B29/06;H01L21/208;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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