发明名称 CIRCUIT STRUCTURE FOR PERFORMING CONTROLLED CUT-OFF OF METAL OXIDE FIELD EFFECT TRANSISTOR
摘要 PURPOSE: To provide a high-reliability protection circuit by minimizing time when a non-controlled current flows and simultaneously cutting off voltage build-up to apply damage to a power transistor especially in a low voltage driving circuit. CONSTITUTION: In this circuit to perform the cut-off controlled by metal-oxide field-effect transistor To, a transistor for power not shown in Figure is operated as the low voltage driving circuit in a power feeding circuit 10 for electric load ZL and this is inserted between a drain terminal D of transistor To and a positive voltage supply terminal VB to a ground potential M. A switchable discharging circuit 14 is provided between a gate terminal G and the ground terminal M and this is serially connected to an electric switch S. In this case, the circuit 14 is composed of a parallel circuit composed of an ohm resistor R and series-connected plural diodes D1-Dn. The switch S can input signals through a passing current detection circuit 12, and the short-circuitting current of circuit 10 including the transistor To is monitored by detecting the voltage drop of load ZL.
申请公布号 JPH06216734(A) 申请公布日期 1994.08.05
申请号 JP19930274652 申请日期 1993.11.02
申请人 TEXAS INSTR DEUTSCHLAND GMBH 发明人 EERITSUHI BEIYAA
分类号 H01L23/58;H02H3/087;H03K17/08;H03K17/082;(IPC1-7):H03K17/08 主分类号 H01L23/58
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