MANUFACTURE OF MOS SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve TDDB characteristics while ensuring improvement effect of oxide film breakdown voltage characteristics by hydrogen annealing of conventional technique, in the manufacture of an MOS type semiconductor device. CONSTITUTION:In a method of manufacturing a MOS type semiconductor device which has a plurality of heat treatment processes at 800-1100 deg.C in atmospheric gas after an electrode film is formed on a gate oxide film, at least one heat treatment out of a plurality of the heat treatments is performed in a hydrogen atmosphere.