| 摘要 |
PURPOSE:To cell-operate the memory cells of a DRAM without depending upon cell capacitance, by storinging data in the memory cells by using the amount of minority carriers injected into the base of a bipolar transistor. CONSTITUTION:When information '1' is written, a voltage VBL of BL is set to be 0V, and then a potential of WL is increased. A foward bias is applied between the emitter and the base of a bipolar transistor. A backward bias is applied across the base and the collector. From the emitter of an N-layer bipolar transistor of an MOS transistor, electrons of minority carrier are injected into the base, and the concentration of electrons in the base is increased. When '0' is written, VBL=VCC is set and the potential of WL is increased. Backward bias is applied between the emitter and the base of the bipolar transistor and between the base and the collector. From the base of the bipolar transistor, minority carriers in the base are drawn out to the emitter and the collector. Thereby the concentration of electrons in the base is decreased. |
