| 摘要 |
PURPOSE:To restrain a photoresist pattern from varying in line width due to a standing wave effect when the pattern is formed on a substrate such as a semiconductor wafer or the like. CONSTITUTION:Photoresist material is applied onto a substrate 1 such as a semiconductor wafer or the like to form a photoresist film 2, and a first light exposure process is carried out by the use of a prescribed light source and a mask 4. Then, the photoresist film 2 is thermally treated on a hot plate 6 to be reduced by a prescribed value in thickness. Thereafter, a second light exposure process is carried out by the use of the same light, source and the mask as the first process. At this point, the thickness change of the photoresist film is set so as to enable the nodes and antinodes of light standing waves generated at the first and the second light exposure process to deviate from each other in position. By this setup, a resist pattern can be lessened in dispersion of line width by a resultant effect of standing waves. Especially, when a photoresist film is changed in thickness by an odd-numbered times as much as 1/4 of the wavelength of a light source in the film, a resist pattern can be most lessened in dispersion of line width. |
