| 摘要 |
PURPOSE: To solve the problems associated with metal gas release by depositing a thin film of an insulating film capable of depositing at a temperature lower than the melting point of the metal used for metal wiring, after the metal wiring and before the programming ion-implantation so that the metal surface will not be directly exposed to the ions. CONSTITUTION: After an opening part 31 is formed in a region on a gate electrode of a transistor to be selectively formed into a cell in a photographic process using a photomask, including a programming code desired by a user, an insulating film 28 between the gate electrode and a metal layer is etched. Then, programming is carried out by ion implantation. However, as a metallic layer 29 is exposed externally, a thin insulating film 32 is deposited on the entire surface of the wafer to prevent generation of gas in accordance with the ion implantation. At this time, although a deposited insulating film is formed in accordance with a PECVD method about 400 deg.C, this temperature is lower than the melting point of aluminum. |
