| 摘要 |
A semiconductor blue-green light emitting device in a double heterostructure configuration includes a light emitting layer (1), a p-type clad layer (3) and an n-type clad layer (2) sandwiching the light emitting layer, a cap layer (4) and a contact layer (5) in this sequence formed on the clad layer (3). The light emitting layer (1) contains at least one of CdZnSe, ZnSSe, and ZnSe, each of the p-type clad layer (3) and the n-type clad layer (2) contains at least one of ZnSSe, ZnSe and ZnMgSSe, the cap layer (4) is of (AlXGa1-X)0.5In0.5P (0</= X</= 1), and the contact layer (5) is of AlXGa1-XAs (0</= X</= 1). The diode provided is with improved ohmic characteristics. <IMAGE> |
