发明名称 TITANIUM NITRIDE SPUTTERING TARGET
摘要 PURPOSE:To provide a titanium nitride sputtering target hardly generating particles at the time of sputtering and capable of stably forming a high quality titanium nitride film. CONSTITUTION:This titanium nitride sputtering target is made of a bonded body of titanium nitride particles formed by sintering and nitriding Ti particles and the average diameter of pores existing in this target is 5-20mum, or the average diameter of pores existing in this target is 5-20mum and the average particle diameter of the titanium nitride particles is 5-200mum.
申请公布号 JPH06212417(A) 申请公布日期 1994.08.02
申请号 JP19920129670 申请日期 1992.04.22
申请人 JAPAN ENERGY CORP 发明人 SAWADA SUSUMU;FUJIOKA MASAAKI;OHASHI TAKEO;KANANO OSAMU
分类号 C23C14/34;C04B35/58 主分类号 C23C14/34
代理机构 代理人
主权项
地址