发明名称 |
Wafer bonding using trapped oxidizing vapor |
摘要 |
A bonding method including pressing a pair of slices together with a liquid oxidant therebetween and subjecting the pair of slices to a temperature to bond the slices together. Preferably a liquid oxidant is applied to one of the slices before they are pressed together and then dried. The heating step for bonding is carried out at a sufficiently high temperature of at least 1100 DEG C. to make the slices pliable so as to comply with each other during the bonding step.
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申请公布号 |
US5334273(A) |
申请公布日期 |
1994.08.02 |
申请号 |
US19930137293 |
申请日期 |
1993.10.14 |
申请人 |
HARRIS CORPORATION |
发明人 |
SHORT, JOHN P.;MCLACHLAN, CRAIG J.;ROUSE, GEORGE V.;ZIBRIDA, JAMES R. |
分类号 |
H01L21/20;H01L21/316;H01L21/762;(IPC1-7):B32B31/24 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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