发明名称 Wafer bonding using trapped oxidizing vapor
摘要 A bonding method including pressing a pair of slices together with a liquid oxidant therebetween and subjecting the pair of slices to a temperature to bond the slices together. Preferably a liquid oxidant is applied to one of the slices before they are pressed together and then dried. The heating step for bonding is carried out at a sufficiently high temperature of at least 1100 DEG C. to make the slices pliable so as to comply with each other during the bonding step.
申请公布号 US5334273(A) 申请公布日期 1994.08.02
申请号 US19930137293 申请日期 1993.10.14
申请人 HARRIS CORPORATION 发明人 SHORT, JOHN P.;MCLACHLAN, CRAIG J.;ROUSE, GEORGE V.;ZIBRIDA, JAMES R.
分类号 H01L21/20;H01L21/316;H01L21/762;(IPC1-7):B32B31/24 主分类号 H01L21/20
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