| 摘要 |
PURPOSE:To obtain a silicon carbide member excellent in durability and capable of easily and highly cleaning the surface of a jig by previously filling the pore and ruggednesses on the surface of a silicon carbide substrate to be used with SiO2. CONSTITUTION:The pore and ruggednesses on the surface of a silicon carbide substrate to be used for producing the reaction tube, jig, etc., of the semiconductor diffusing furnace are previously filled with SiO2. In this case, an SiO2 powder is directly fused to the ruggednesses and pore or the pore and ruggednesses are filled by physical vapor deposition, sol-gel method, etc., and the sol-gel method is preferably used. When the sol-gel method is used, hydrochloric acid is firstly added to a mixed soln. of an alkoxysilane and water to hydrolyze the alkoxysilane, the substrate is dipped in the obtained sol, then taken out and dried to convert the sol penetrating into the pore and ruggednesses to a dry gel, the dry gel is further heated to high temp. in the air and converted to SiO2. The silicon carbide member for the reaction tube, etc., is then produced by using the silicon carbide substrate. |
