发明名称 INTERCONNECTING STRUCTURE
摘要 <p>PURPOSE: To provide a metallization structure on a substrate adequate for requirements of mechanical strength in pad-on-pad connection. CONSTITUTION: An electrical interconnection structure 20 has at least one conductive future 26 or 28 on a surface of a substrate 10, conductive metallization caps 22 and 24 for covering partly the conductive furthers 26 and 28, and a high molecular material layer 30 attached to the surface of the substrate. Then, only a part of the conductive future, which is not converted by the cap 22 or 24, around the cap 22 or 24 is covered with high molecular material layer. In addition, the caps 22 and 24 are extended to an upper part of the high molecular material layer.</p>
申请公布号 JPH06209052(A) 申请公布日期 1994.07.26
申请号 JP19930266871 申请日期 1993.10.26
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 UMARU MOEZU UTSUDEIN AFUMADO;AANANDA HOSAKERE KUMARU;ERITSUKU DANIERU PERUFUEKUTO;CHIYANDORIKA PURASADO;SANPATO PURUSHIYOTAMAN;SUDEIPUTA KUMARU REI
分类号 H01L23/12;H01L23/32;H01L23/498;H01L23/538;H05K1/03;H05K1/11;H05K3/00;H05K3/40;H05K3/46;(IPC1-7):H01L23/12 主分类号 H01L23/12
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