| 摘要 |
<p>PURPOSE:To secure the excellent performance of a driving circuit unit in the manufacture of LCD substrate for forming a driving circuit unit on a non-crystal semiconductor film, which is formed on a glass substrate. CONSTITUTION:A non-crystal silicone film 2 is formed on a glass substrate 1 by the pressure reduction CVD or the like, and this non-crystal silicone film 2 is irradiated with pulse of laser beam into an island-shape pattern by a laser irradiating unit 3, and the irradiated area is polycrystallized. In this case, after the irradiation at an energy less than the irradiation energy required for polycrystallization per each area, irradiation at the required energy is performed. Thereafter, film forming treatment and etching are repeated in the irradiated area to form a driving circuit unit, which consists of semiconductor elements, and the wiring with a previously formed TFT 5 is performed by the film forming treatment in this process.</p> |
