发明名称 METHOD AND APPARATUS FOR PROCESSING SEMICONDUCTOR DEVICE
摘要 PURPOSE: To improve the processability of a large area substrate by selectively supplying various types of reaction gases by one unit of equipment under the atmospheric pressure, decomposing the gas by using corona discharge and irradiating the surface of the substrate for chemical reaction or diffusion. CONSTITUTION: A pair of electrodes 14, which generate corona discharge by an RF power supply 13 placed on a substrate holding table 11 under the atmospheric pressure, are provided, one electrode 14 is grounded and the other electrode 14 is connected to the RF power supply 13. Therefore, when power is applied from the RF power supply 13, corona discharge is caused between the electrodes 14 or between the electrodes 14 and the substrate holding table 11. When various types of reaction gases are selectively supplied to the upper part of the electrode 14 by a gas supply system 15 under such condition, electrons excited between the electrodes 14 make the molecules of the reaction gas into high energy ions and radicals. Then, the ions and radicals applied on the substrate chemically react on the surface of the semiconductor or diffuse into the semiconductor. Thus, the processability of a large area substrate is improved.
申请公布号 JPH06208955(A) 申请公布日期 1994.07.26
申请号 JP19930303426 申请日期 1993.11.09
申请人 GOLD STAR CO LTD 发明人 YASU HEICHIYORU
分类号 H01L21/205;C23C16/06;C23C16/24;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/505;C23C16/509;H01L21/203;H01L21/223;H01L21/265;H01L21/285;H01L21/30;H01L21/306;H01L21/3065;H01L21/31;H01L21/311;H01L21/316;H01L21/318;(IPC1-7):H01L21/205 主分类号 H01L21/205
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