| 摘要 |
PURPOSE:To obtain an ohmic electrode of a solar cell having high adhesive strength to a board and excellent ohmic characteristics by insularly forming a first metal layer containing Zn as a main ingredient, and forming a second metal layer containing Au or Ag as a main ingredient on a semiconductor surface in which the first layer is not formed. CONSTITUTION:An n-type region 2 is formed on a surface of a p-type InP substrate 1, and a p-n junction 3 is formed by vapor thermal diffusion in an In2S3 atmosphere. An Ag-Zn ohmic electrode 4 is formed on a rear surface. In this case, a first metal layer containing much Zn is first insularly formed by heating it at a relatively high temperature. Then, a second metal layer containing Ag as a main ingredient is formed by heating it at a relatively high temperature (a melting point or higher of the Ag). After the electrode 4 is formed, an Ag-plated layer 5 is formed on the electrode 4. Thus, the ohmic electrode of a solar cell in which adhesive strength to the p-type semiconductor substrate is increased and which has excellent ohmic characteristics can be obtained. |
