| 摘要 |
PURPOSE:To prevent the capacitance value of a capacitative element from being lowered due to oxidation when a capacitance dielectric film is formed and also to reduce an undesired parasitic capacity. CONSTITUTION:A lower electrode 13 for a capacity has a metal films 8 of high melting point, the oxide film 11 of which is conductive, and also in the side surfaces are formed a side wall insulating film 6-2 having a lower dielectric constant than that of a capacitance dielectric film 10. |
