| 摘要 |
The semiconductor electronic component comprises, within a semiconductor substrate (3), a first active region (2, 4) having a first type of conductivity (N, N<++>), and a second active region (10), having a second type of conductivity (P, P<++>), which is opposite to the first type, situated between the first active region (2) and the upper face (5) of the substrate. On the upper face of the substrate a projecting region (6) is provided, containing a third active region (7, 8) having the first type of conductivity (N<+>, N<++>) and surmounting a first part (10a) of the second active region. Metallisations (13, 14, 15) are situated respectively in contact with the three active regions (4, 10e, 7). The second active region includes a depletable semiconducting zone (Z) extending out of the first part (10a) of the second active region, and between the first active region (2) and the upper face (5) of the substrate. Depletion means (11; 213b, 209b, 211) are also provided, situated in the immediate vicinity of this depletable zone (Z) and able to deplete the said depletable zone under the action of a chosen bias voltage. <IMAGE> |
