| 摘要 |
PURPOSE:To provide structure which can avoid deterioration of breakdown voltage and injection of surplus holes and which can attain a high-speed recovery diode by a method wherein the third semiconductor layer exists and the second semiconductor layer is selectively formed in the first semiconductor layer. CONSTITUTION:An anode p-layer 3 is selectively formed on an n<->-body 2 and on the n<->-body 2, a p<->-layer 4a is formed complementarily to the anode p-layer 3 spatially. In the n<->-body 2, a p-region 5 is formed selectively under the p<->-layer 4a. Then on the n<->-body 2, an anode electrode 6 connected to both p<->-layer 4a and anode p-layer 3 is formed and under the n<->-body 2, a cathode electrode 7 is formed through a cathode layer 1 respectively. Accordingly, injection of surplus carriers can be controlled without decreasing breakdown voltage VBR and such recovery characteristics that recovery current IRR is small and change in electric current thereafter till stop of current is gentle can be attained. |
