发明名称 Field emission structures produced on macro-grain polysilicon substrates
摘要 A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
申请公布号 US5329207(A) 申请公布日期 1994.07.12
申请号 US19920883629 申请日期 1992.05.13
申请人 MICRON TECHNOLOGY, INC. 发明人 CATHEY, DAVID A.;ROLFSON, J. BRETT;LOWREY, TYLER A.;DOAN, TRUNG T.
分类号 H01J1/30;H01J1/304;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J1/30 主分类号 H01J1/30
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