发明名称 |
Field emission structures produced on macro-grain polysilicon substrates |
摘要 |
A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
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申请公布号 |
US5329207(A) |
申请公布日期 |
1994.07.12 |
申请号 |
US19920883629 |
申请日期 |
1992.05.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CATHEY, DAVID A.;ROLFSON, J. BRETT;LOWREY, TYLER A.;DOAN, TRUNG T. |
分类号 |
H01J1/30;H01J1/304;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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