| 发明名称 |
Method for forming a thin film on a semiconductor device using an apparatus having a load lock |
| 摘要 |
A method for forming a thin film on a semiconductor substrate wherein the substrate is transferred between an auxiliary chamber having an inert atmosphere to a reaction chamber having a reactive atmosphere, and wherein the inert and the reactive atmospheres exist concurrently during transfer.
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| 申请公布号 |
US5327624(A) |
申请公布日期 |
1994.07.12 |
| 申请号 |
US19900629566 |
申请日期 |
1990.12.18 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRAYAMA, MAKOTO |
| 分类号 |
C23C16/44;C23C16/54;H01L21/00;H01L21/677;(IPC1-7):H01L21/302;H01L21/463;C23C16/00 |
主分类号 |
C23C16/44 |
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