| 摘要 |
PURPOSE:To provide a light emitting diode capable of light emission with the wavelength of blue with practical high luminous intensity by making it contain Al within the range where a ZnS compound does not change zinc blend crystal structure. CONSTITUTION:An n-type ZnS compound semiconductor layer 2, 1mum thick containing 5% Al is grown, with DMZn, H2S, and TMAI as source materials, by heating an n-type GaAs substrate 1 to 350 deg.C. For making it into n type, doping is performed during growth, using C2H5I, so as to get a film made into n type 10<18>/cm<3> in dosage. Next, under the same condition, a p-type ZnS compound semiconductor layer 3 containing 5% Al is grown. For making it into p type, doping is performed during growth, using PH3, so as to get a film made into p type 10<18>/cm<3> in dosage. A blue light emitting diode, whose luminous intensity is 300mcd with a forward current of 40mA, is gotten. Heresy, the diversification and the functional promotion of a light emitting diode expedites the performance improvement of display equipment and information processing equipment. |
