摘要 |
PURPOSE:To suppress the mis-registration between light shielding film patterns and phase shift patterns occurring in the difference in the measured value of the flatness of a phase shift mask substrate at the time of plotting the light shielding film patterns and at the time of plotting the phase shift patterns. CONSTITUTION:The flatness of the phase shift mask substrate is measured by a Z correcting part 17 at the time of transferring the light shielding film patterns to the first resist film on the phase shift mask substrate M. The flatness condition obtd. by the measurement is decided as the flatness condition at the time of transferring the phase shift patterns to the second resist film on the phase shift mask substrate. The deflection quantity, etc., at the time of plotting the phase shift patterns are corrected in accordance therewith. |