| 摘要 |
<p>A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1%. The layers are under elastic tension and have a thickness below the critical thickness.</p> |
