Signal sensing circuits for memory system using dynamic gain memory.

摘要

A memory system includes a plurality of gain memory cells connected via bit bits to sense amplifiers with each sense amplifier having at least two pairs of metal oxide semiconductor (MOS) transistors which have opposite conductivity types. Each gain memory cell has two serially connected n-channel MOS transistors with a diode connected between a gate of a first of the transistors and a source thereof. Three illustrative embodiments of sense amplifiers are used with the gain memory cells. <IMAGE>