| 摘要 |
PURPOSE: To obtain a signal charge transmitter for a high speed operation with charge transmission efficiency by constituting the impurity doping types of a first charge transmission electrode and a second charge transmission electrode so as to be made different without forming a barrier layer by impurity ion implantation in a BCCD channel area. CONSTITUTION: First charge transmission electrodes 3 are formed with constant intervals on a gate insulating film 2, and second charge transmission electrodes 4 formed of p-type polysilicon are formed between those electrodes 3 so as to be separated from the electrodes 3 by insulating films 2a. The first charge transmission electrodes 3 and the second charge transmission electrodes 4 are doped as different conductive types while a barrier layer is not present in a BCCD channel area 5. Thus, when clock signals Hϕ1 and Hϕ2 are alternately impressed to the first charge transmission electrodes 3 and the second charge transmission electrodes 4, the BCCD channel area 5 can be prevented with a potential different in level. Therefore, a signal charge can be uni-directionally transmitted.
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