| 摘要 |
<p>PURPOSE:To prevent the etching residuum of high melting point metal contained in Al alloy from remaining on a substrate, when patterning aluminum alloy electrode wiring by a wet etching means, concerning the method of forming the aluminum alloy electrode wiring arranged on a TFT matrix. CONSTITUTION:This method includes a process of coating a substrate 1 with a pure aluminum film 2 as a base film in a vacuum atmosphere, a process of coating the aluminum base film 2 with an aluminum alloy film 3 thicker than the pure aluminum base film 3 in the same vacuum atmosphere subsequently, and a process of collectively patterning the aluminum alloy film 3 and the pure aluminum base film 2 into the shapes of electrode wiring patterns 3G by the wet etching means using the etchant having phosphoric acid for its main ingredient.</p> |
