发明名称 THINNING METHOD FOR SEMICONDUCTOR PELLET
摘要 <p>PURPOSE:To eliminate a crack problem during grinding of a rear surface of a wafer and to reduce a thickness of a semiconductor pellet by adhering the pellet separated by dicing to a conveying tape, and grinding the pellet adhered to the tape in parallel with a main surface to split it. CONSTITUTION:A dicing sheet 10 made of organic material is adhered to a wafer ring 9 and a rear surface of a wafer 21, its surface 21a is disposed upside, and fixed to a chuck table 11 by vacuum evacuation. A diamond blade grinding wheel 12 is rotated at a high speed, and in order to divide a wafer to individual pellets, cut grooves of a depth in which the sheet 10 is not completely cut are formed in a small cube state. Then, only non-defective pellets 22 of the separate pellets aligned and disposed on the sheet 10 are transferred to a conveying tape 12. The pellets 22 taped to the tape 13 are ground substantially in parallel with a main surface of the pellet to be split, thereby obtaining thin pellets 23.</p>
申请公布号 JPH06177099(A) 申请公布日期 1994.06.24
申请号 JP19920349894 申请日期 1992.12.02
申请人 TOSHIBA CORP 发明人 KATO TOSHIHIRO
分类号 H01L21/301;H01L21/304;H01L21/78;(IPC1-7):H01L21/304 主分类号 H01L21/301
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